Basic Product Information
Part Number: 2N7002K-T1-GE3
| Field |
Value |
| Manufacturer |
Vishay Siliconix |
| Device Type |
2N7002K-T1-GE3 |
| Package |
SOT-23-3 (TO-236-3) |
| Compliance |
RoHS3 (Lead-Free, E3 suffix) / REACH Unaffected |
| Grade |
Commercial / Industrial (-55°C to +150°C TJ) |
| Series |
TrenchFET® |
| Product Status |
Active |
| MSL |
MSL 1 – Unlimited |
| ECCN |
EAR99 |
| Marking Code |
7K |
Core Electrical Parameters
| Parameter |
Value |
Unit |
| FET Type |
N-Channel Enhancement MOSFET |
– |
| Drain-Source Voltage (VDSS) |
60 |
V |
| Gate-Source Voltage (VGSS) |
±20 |
V |
| Continuous Drain Current (ID) @ 25°C |
300 |
mA (Ta) |
| Continuous Drain Current (ID) @ 100°C |
190 |
mA |
| Pulsed Drain Current (IDM) |
800 |
mA |
| On-Resistance (RDS(on)) @ VGS = 10V |
2.0 |
Ω (max) @ ID = 500mA |
| Gate Threshold Voltage (VGS(th)) |
1.0 ~ 2.5 |
V @ ID = 250µA |
| VGS(th) Typical |
2.0 |
V |
| Gate Charge (Qg) @ VGS = 4.5V |
0.6 |
nC (max) |
| Gate Charge (Qg) Typical |
0.4 |
nC |
| Input Capacitance (Ciss) @ VDS = 25V |
30 |
pF (max) |
| Input Capacitance (Ciss) Typical |
25 |
pF |
| Turn-On Delay Time (td(on)) |
25 |
ns (typ.) |
| Turn-Off Delay Time (td(off)) |
35 |
ns (typ.) |
| Forward Transconductance (gfs) |
100 |
mS (min) |
| Power Dissipation (PD) @ 25°C |
350 |
mW (Ta) |
| Thermal Resistance (RthJA) |
350 |
°C/W |
| ESD Protection |
2000 |
V (HBM) |
| Operating Temperature |
-55 ~ +150 |
°C (TJ) |
| Package Dimensions |
2.90 x 1.30 x 1.00 |
mm |
| Pin Configuration |
Pin 1: Gate, Pin 2: Source, Pin 3: Drain |
– |
| Factory Pack Quantity |
3,000 |
Tape & Reel |
Core Features & Advantages
The 2N7002K-T1-GE3 is Vishay Siliconix’s TrenchFET® N-channel enhancement-mode MOSFET in SOT-23-3 — the “K” suffix upgraded variant of the classic 2N7002, delivering lower RDS(on) (2Ω vs. 3–5Ω for the original 2N7002), lower gate charge (0.4nC typical), and 2000V ESD protection, making it the preferred logic-level MOSFET switch for TTL/CMOS direct-drive applications.
- Primary Function: N-Channel enhancement MOSFET, 60V VDSS, 300mA ID, 2Ω RDS(on) @ 10V, 2V VGS(th) typical, 0.4nC Qg, 25ns ton, SOT-23-3, TrenchFET® technology, 2000V ESD protection.
- Advantages:
- TrenchFET® Technology — 2x Lower RDS(on) vs. Planar 2N7002: The 2N7002K uses Vishay’s TrenchFET® vertical trench gate architecture, which creates a conductive channel on the vertical sidewalls of trenches etched into the silicon — dramatically increasing channel width per unit die area compared to the lateral planar structure of the original 2N7002. The result: RDS(on) drops from 3–5Ω (planar) to 2Ω (trench) at VGS = 10V, a 2x improvement. In practical terms, at ID = 200mA, the voltage drop across the MOSFET drops from 0.6–1.0V to 0.4V — the difference between a relay that reliably pulls in and one that doesn’t when driven from a 3.3V logic rail.
- Ultra-Low Gate Charge (0.4nC) — Direct CMOS/TTL Drive Without Buffer: With a typical gate charge of only 0.4nC (0.6nC max), the 2N7002K can be driven directly from any CMOS or TTL logic output without a gate driver IC. At 3.3V logic swing, the gate drive current required for a 100 kHz switching frequency is only I = Qg × f = 0.4nC × 100kHz = 40µA — well within the output current capability of any MCU GPIO. This eliminates the gate driver stage entirely in low-frequency switching applications (relays, LEDs, motor direction control), reducing BOM count and PCB area.
- Low Threshold Voltage (2V typ.) — 3.3V and 2.5V Logic Compatibility: The VGS(th) of 2.0V (typical) / 2.5V (max) ensures the MOSFET is fully enhanced at 3.3V VGS, delivering RDS(on) close to the 4.5V specification. At VGS = 3.3V, the 2N7002K typically achieves RDS(on) of approximately 3–4Ω — sufficient to switch 100–200mA loads with acceptable voltage drop. This is a key advantage over older 2N7002 variants with VGS(th) up to 3V, which may not fully turn on at 3.3V logic levels and require 5V gate drive for reliable operation.
Typical Application Scenarios
- Industry: Consumer Electronics / Industrial / Computing / Battery-Powered Systems
- Equipment: Relay and solenoid drivers, LED backlight switches, load switches, logic-level translators, solid-state relays, battery disconnect circuits, display panel power gating
- Use Cases:
- MCU GPIO Relay Driver (Direct 3.3V Gate Drive): The 2N7002K drives a 5V or 12V relay coil directly from a 3.3V MCU GPIO. The 2V VGS(th) ensures the MOSFET is fully enhanced at 3.3V logic high, passing sufficient drain current (200–300mA) to energize the relay coil. A flyback diode (1N4148 or similar) across the coil protects the MOSFET from inductive kickback. The 60V VDSS provides ample margin against the flyback voltage spike, and the 2Ω RDS(on) ensures the MOSFET dissipates only P = I² × R = 0.3² × 2 = 180mW — well within the 350mW rating without a heatsink.
- Battery-Powered System Load Switch (Power Gating): In IoT sensors and wearables, the 2N7002K acts as a high-side load switch (with a pull-up resistor to the battery rail) or low-side disconnect for peripheral power domains. The 25pF typical input capacitance and 4µA max leakage ensure minimal quiescent current draw when the switch is off — critical for battery life in always-on systems. The 0.4nC gate charge means the MCU can toggle the switch at kHz rates with negligible energy cost per transition, enabling fine-grained duty cycling of power-hungry peripherals.
- Logic-Level Voltage Translation (5V to 3.3V Bidirectional): A pair of 2N7002K MOSFETs implements a bidirectional level shifter for I2C or SPI buses between 5V and 3.3V domains. The gate is tied to 3.3V, source to the 3.3V bus side (with pull-up), drain to the 5V bus side (with pull-up). When the 3.3V side drives low, the MOSFET conducts and pulls the 5V side low. When the 5V side drives low, the body diode conducts first, then the MOSFET turns on via the VGS difference. This classic two-MOSFET bidirectional shifter works reliably because the 2N7002K’s low VGS(th) (2V) ensures conduction even with the reduced gate-source voltage during 5V-to-3.3V translation.
Market Reference Price
| Market |
Price Range |
Currency |
| DigiKey (CT) |
$0.330 (1 pcs) / $0.083 (1,000+ pcs) |
USD |
| DigiKey (TR) |
$0.065 (3,000+ pcs) / $0.058 (6,000+ pcs) |
USD |
| TTI Europe (TR) |
€0.035 (3,000+ pcs) |
EUR |
| Huaqiangbei Spot |
¥0.02 ~ ¥0.08 |
CNY |
Related Models Comparison
| Model |
Difference |
Application |
| 2N7002 (Vishay, original) |
Planar structure, RDS(on) 3–5Ω, higher Qg |
Legacy designs, less demanding switching |
| 2N7002K (onsemi) |
Same TrenchFET concept, RDS(on) 1.6Ω, 320mA ID |
Slightly lower RDS(on) alternative, cross-compatible |
| BSS138 (Nexperia) |
50V VDSS, 220mA, RDS(on) 3.5Ω, lower VGS(th) 1.3V |
2.5V/1.8V logic level shifting, lower voltage systems |
| DMN2075U (Diodes Inc.) |
20V, 750mA, RDS(on) 75mΩ, much higher current |
Higher power switching, motor drive, power path |
| SI2302DS (Vishay) |
20V, 2.2A, RDS(on) 65mΩ, larger SOT-23 |
Sub-ampere switching, battery power management |
