BC847BLT1G – onsemi AEC-Q101 NPN 45V 100mA General Purpose Transistor SOT-23

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June 14, 2026

Basic Product Information

Part Number: BC847BLT1G

Field Value
Manufacturer onsemi (ON Semiconductor)
Device Type BC847BLT1G
Package SOT-23-3 (TO-236-3)
Compliance RoHS3 / REACH Unaffected / Halogen-Free
Grade AEC-Q101 Qualified / Industrial (-55°C to +150°C TJ)
Series BC846ALT1G Series (BCxxx)
Product Status Active
MSL MSL 1 – Unlimited
ECCN EAR99
Marking Code 1F

Core Electrical Parameters

Parameter Value Unit
Transistor Type NPN
Configuration Single
Collector-Emitter Voltage (VCEO) 45 V (max)
Collector-Base Voltage (VCBO) 50 V
Emitter-Base Voltage (VEBO) 6 V
Continuous Collector Current (IC) 100 mA (max)
DC Current Gain (hFE) 200 ~ 450 @ 2 mA, 5V (B group)
Collector-Emitter Saturation Voltage (VCE(sat)) 600 mV (max) @ 5 mA, 100 mA
Emitter-Base On Voltage (VBE(on)) 660 mV
Collector Cutoff Current (ICBO) 15 nA (max)
Transition Frequency (fT) 100 MHz
Power Dissipation 300 mW (max)
Operating Temperature -55 ~ +150 °C (TJ)
Package Dimensions 2.90 x 1.30 x 1.00 mm
Factory Pack Quantity 3,000 Tape & Reel

Core Features & Advantages

The BC847BLT1G is onsemi’s AEC-Q101 qualified, general-purpose NPN bipolar junction transistor in a SOT-23-3 package — delivering 45 V / 100 mA switching and amplification with hFE group B (200–450) binning, making it the industry-standard small-signal NPN for automotive and industrial designs that require guaranteed gain tolerance and PPAP documentation.

  • Primary Function: General-purpose NPN BJT, 45 VCEO, 100 mA IC, hFE 200–450 (Group B), 100 MHz fT, 300 mW power dissipation, SOT-23-3 surface-mount package, AEC-Q101 qualified and PPAP capable.
  • Advantages:
    • AEC-Q101 Qualified + PPAP Capable — Automotive-Grade Reliability: The BC847BLT1G passes the full AEC-Q101 qualification suite (temperature cycling, HTRB, HTGB, ESD, and more), guaranteeing reliable operation from -55°C to +150°C junction temperature. PPAP capability means automotive OEMs can order this part with production part approval process documentation — eliminating a common sourcing barrier for Tier 1 and Tier 2 suppliers who must demonstrate part-level traceability and qualification evidence.
    • hFE Group B Binning (200–450) — Predictable Gain for Analog Design: The “B” suffix denotes tight hFE binning at 200–450 (measured at IC = 2 mA, VCE = 5V). This 2.25× spread is significantly narrower than the full 110–800 range of the unsorted BC847, enabling analog designers to set bias points with confidence without trimmer potentiometers or software calibration loops. In push-pull output stages and current mirror circuits, matched hFE between NPN (BC847B) and PNP (BC807B) pairs reduces DC offset and crossover distortion.
    • MSL 1 + Halogen-Free — Unlimited Floor Life, Green Compliance: MSL 1 (unlimited) means no bake-out before reflow — the BC847BLT1G can be stored indefinitely in standard factory environments and loaded directly onto SMT placement machines. Combined with halogen-free molding compound, this simplifies material handling, reduces manufacturing cycle time, and meets IEC 61249-2-21 halogen-free requirements for green electronics mandates.

Typical Application Scenarios

  • Industry: Automotive / Industrial / Consumer Electronics / Telecommunications
  • Equipment: ECU signal conditioning, sensor interfaces, LED drivers, relay drivers, load switches, logic level translators, audio preamplifiers
  • Use Cases:
    • Automotive ECU Low-Side Switch for Indicator LEDs: The BC847BLT1G drives dashboard indicator LEDs (typically 10–20 mA) as a low-side switch controlled by a 3.3V MCU GPIO. The 45V VCEO provides ample margin against automotive load dump transients when protected by an upstream TVS, while the 100 mA rating supports up to 30 parallel LEDs per transistor. The AEC-Q101 qualification ensures this part survives the 85°C under-hood ambient and 1500 temperature cycles specified in LV 124.
    • Industrial Sensor Signal Conditioning (Current-to-Voltage): In 4–20 mA current loop receiver circuits, the BC847BLT1G amplifies the small voltage developed across a precision shunt resistor to a level suitable for an ADC input. The hFE of 200–450 provides sufficient gain in a single stage, and the 15 nA ICBO ensures minimal offset drift over the -40°C to +85°C industrial operating range. The SOT-23-3 footprint allows the transistor to be placed directly at the connector entry point, minimizing EMI pickup on the high-impedance analog trace.
    • Logic Level Translation (5V to 3.3V): In mixed-voltage systems, the BC847BLT1G translates 5V logic signals to 3.3V levels using a simple common-emitter inverter with a pull-up resistor to the 3.3V rail. The 6V VEBO and 45V VCEO tolerate 5V inputs without clamping diodes, and the 100 MHz fT ensures clean switching edges at data rates up to several MHz — adequate for SPI, UART, and slow GPIO bridging between 5V legacy peripherals and 3.3V MCUs.

Market Reference Price

Market Price Range Currency
DigiKey (CT) $0.130 (1 pcs) / $0.030 (1,000+ pcs) USD
DigiKey (TR) $0.023 (3,000+ pcs) / $0.020 (6,000+ pcs) USD
Newark $0.111 (1 pcs) / $0.029 (1,000+ pcs) USD
Huaqiangbei Spot ¥0.07 ~ ¥0.17 CNY

Related Models Comparison

Model Difference Application
BC847ALT1G Same die, hFE Group A (110–220) Lower gain applications, open-collector drivers
BC847CLT1G Same die, hFE Group C (420–800) High-gain preamplifier stages, Darlington replacement
BC847,215 (Nexperia) Pin-compatible equivalent, Nexperia brand Second-source / dual-sourcing strategy
MMBT3904LT1G 40V, 200 mA, 300 MHz, different hFE profile Higher current / higher frequency switching
BC807BLT1G PNP complement, -45V, -500 mA, hFE 200–450 Push-pull pair, complementary driver