Basic Product Information
Part Number: BSS123-7-F
Core Electrical Parameters
| Parameter |
Value |
Unit |
| Drain-Source Voltage (VDSS) |
100 |
V |
| Gate-Source Voltage (VGSS) |
±20 |
V |
| On-Resistance Rds(on) (typ) |
6 @ VGS=10V / 8 @ VGS=4.5V |
Ω |
| Drain Current (ID, continuous) |
0.17 |
A |
| Gate Threshold Voltage (Vth) |
1.0 to 2.5 |
V |
| Total Gate Charge (Qg, typ) |
2.6 |
nC |
| Input Capacitance (Ciss, typ) |
50 |
pF |
| Turn-On Delay Time (typ) |
5 |
ns |
| Turn-Off Delay Time (typ) |
12 |
ns |
| Power Dissipation (max) |
400 |
mW |
| Operating Temperature |
-55 to +150 |
°C (junction) |
| Package Size |
2.9 x 1.3 x 1.0 (typ) |
mm |
Core Features & Advantages
The BSS123-7-F delivers a 100V logic-level N-channel MOSFET in industry-standard SOT-23-3, optimized for low-voltage gate drive switching and level-shifting applications.
- Primary Function: Small-signal N-channel enhancement-mode MOSFET for low-power switching, level shifting, and load driving in SOT-23-3 footprint.
- Advantages:
- Logic-level gate drive (VGS=4.5V guaranteed Rds(on)) — fully enhances with 3.3V/5V logic outputs, eliminating gate driver circuitry in MCU-controlled switching.
- 100V drain-source rating — provides ample voltage headroom for 12V/24V relay and LED string switching, exceeding common 60V alternatives.
- Ultra-low 2.6nC gate charge — enables fast switching with minimal gate drive current, ideal for high-frequency PWM and level-shifting circuits.
Typical Application Scenarios
- Industry: Consumer / Industrial / Automotive
- Equipment: Relay drivers, LED string switches, level shifters, load switches, motor drivers
- Use Cases:
- Level-shifting and gate-driving interface between 3.3V MCU GPIO and 12V/24V relay or solenoid coils.
- Low-side switch for LED string or small DC motor PWM control with logic-level gate drive from MCU.
- General-purpose small-signal switching and load isolation in consumer electronics with SOT-23-3 footprint.
Market Reference Price
| Market |
Price Range |
Currency |
| Huaqiangbei Spot |
$0.01 – $0.03 |
USD |
| Overseas B2B |
$0.02 – $0.06 |
USD |
Related Models Comparison
| Model |
Difference |
Application |
| 2N7002K-T1-GE3 |
60V VDS, lower Rds(on) (~2Ω), similar SOT-23-3 logic-level MOSFET |
Lower-voltage switching where 60V is sufficient and lower Rds(on) is preferred |
| BSS138-7-F |
50V VDS, higher Rds(on) (~6Ω), popular for I²C level shifting |
I²C/SPI bidirectional level shifting (3.3V ↔ 5V) |
| DMN2075U-7 |
20V VDS, much lower Rds(on) (~75mΩ), higher current (4.5A) |
Power switching requiring very low on-resistance and higher current |
